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APT100GN120JDQ4
1200V, 100A, VCE(ON) = 1.7V Typical
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short cuircuit fault. Low gate charge simplifies gate drive design and minimizes losses. * 1200V Field Stop * Trench Gate: Low VCE(ON) * Easy Paralleling * Integrated Gate Resistor: Low EMI, High Reliability * RoHS Compliant
E G C
E
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified. Ratings
1200 30 153 70 300 300A @ 1200V 446 -55 to 150 Watts C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
Min
1200 5.0 1.4 -
Typ
5.8 1.7 2.0 7.5
Max
6.5 2.1 200 1500 600 -
Unit
Volts
A nA
050-7629 Rev A 9-2008
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GN120JDQ4
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 100A TJ = 150C, RG = 4.3 , VGE = 15V, L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V
4 5 7
Min 300 -
Typ 6500 365 280 9.5 540 50 295
Max -
Unit
pF
V
Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
nC
A 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 mJ ns J ns
IC = 100A RG = 1.0 7 TJ = +25C
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 100A RG = 1.0 7 TJ = +125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R R
JC JC
Min
2500
Typ
29.2 -
Max
0.28
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws. RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
0.32 10 1.1 g in*lbf N*m Volts
WT Torque VIsolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7629 Rev A 9-2008
Typical Performance Curves
300 300
V
GE
APT100GN120JDQ4
15V 13V IC, COLLECTOR CURRENT (A) 250 12V
= 15V
IC, COLLECTOR CURRENT (A)
250
TJ = -55C TJ = 25C TJ = 125C TJ = 175C
200
200 11V 150 10V 9V 8V 7V
150
100
100
50 0
50 0
0 1.0 2.0 3.0 4.0 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 300 250 TJ = 125C 200 TJ = 25C 150 TJ = -55C 100 50 0 VGE, GATE-TO-EMITTER VOLTAGE (V) TJ = 150C
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3 2.5 2 1.5 IC = 50A 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE I = 100A C T = 25C
J
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V VCE = 960V
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 50A IC = 100A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 200A
IC = 200A
IC = 100A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 250
0 -50 -25
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75
200
150
50
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
050-7629 Rev A 10-2008
100
Typical Performance Curves
60 50 40 30 20 10 T = 25C, or 125C J 0
RG = 1.0 L = 100H VCE = 800V
APT100GN120JDQ4
1000 td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
800
600
VGE =15V,TJ=125C VGE =15V,TJ=25C
400
200
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250
RG = 1.0, L = 100H, VCE = 800V
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
0
VCE = 800V RG = 1.0 L = 100H
200 tr, RISE TIME (ns) tf, FALL TIME (ns)
200
TJ = 125C, VGE = 15V
150
150
100
100
TJ = 25C, VGE = 15V
50
TJ = 25 or 125C,VGE = 15V
50
RG = 1.0, L = 100H, VCE = 800V
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 80,000 EON2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 30,000 EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0
25,000
60,000
TJ = 125C
TJ = 125C
20,000
40,000
15,000
10,000
20,000
TJ = 25C
5000 0
TJ = 25C
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE T = 125C
J
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 80,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 1.0
G
Eon2,200A
Eon2,200A
80,000
60,000
60,000
40,000
050-7629 Rev A 10-2008
40,000
Eoff,200A Eon2,100A
20,000
Eoff,200A
Eon2,100A Eon2,50A Eoff,50A
20,000
Eoff,100A Eon2,50A Eoff,50A
Eoff,100A
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10,000 5,000 C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 350 300 250 200 150 100 50 0
APT100GN120JDQ4
P
1,000 500 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.25
0.20
0.7
0.15
0.5
Note:
0.10
PDM
0.3
t1 t2
0.05
0.1 0.05
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0
10-5
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
25 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
10
0.0798
0.0158
5
Power (watts)
0.174
0.397
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
0.0266 Case temperature. (C)
28.9
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 50 70 90 110 130 150 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
050-7629 Rev A 10-2008
APT100GN120JDQ4
Gate Voltage 10% td(on) TJ = 125C
APT100DQ120
tr
V CC IC V CE
90%
Collector Current
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 1, Inductive Switching Test Circuit
Figure 2, Turn-on Switching Waveforms and Definitions
90%
TJ = 125C Gate Voltage
90% td(off) tf 10% Collector Voltage
0
Collector Current
Switching Energy
Figure 3, Turn-off Switching Waveforms and Definitions
050-7629 Rev A 10-2008
Typical Performance Curves
APT100GN120JDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 88C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT100GN120JRDQ4
100 127 1000 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 100A VF Forward Voltage IF = 150A IF = 100A, TJ = 125C
Min
Type
2.4 2.65 1.8
Max
3.0
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 Z JC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.3 0.10 0.05 0 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 4a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10-4 0.1 0.05 SINGLE PULSE
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 800V, TC = 25C
Min
-
Typ 45 385 1055 6 480 5240 19 210 9345 70
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 100A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
TJ (C)
0.0308 Dissipated Power (Watts) 0.00101 0.0299 0.309 0.0693
TC (C)
0.219 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 4b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7629 Rev A 9-2008
ZEXT
Typical Perfromance Curves
300 trr, REVERSE RECOVERY TIME (ns) 600
T = 125C J V = 800V
R
APT100GN120JDQ4
150A
IF, FORWARD CURRENT (A)
250
500
200 TJ = 175C 150 TJ = 125C 100 TJ = 25C 50 TJ = -55C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 5. Forward Current vs. Forward Voltage 12000 0 0
400
100A 50A
300
200
100 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 6. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 80 70 60 50 40 30 20 10 0 50A
T = 125C J V = 800V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 800V
R
10000 8000
150A 100A
150A 100A
6000 50A 4000 2000 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 8. Reverse Recovery Current vs. Current Rate of Change 160 140 120 IF(AV) (A) 100 80 60 40 20
Duty cycle = 0.5 T = 175C
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 9. Dynamic Parameters vs. Junction Temperature 800 CJ, JUNCTION CAPACITANCE (pF) 700 600 500 400 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 11. Junction Capacitance vs. Reverse Voltage
0
75 100 125 150 175 Case Temperature (C) Figure 10. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7629 Rev A 9-2008
APT100GN120JDQ4
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 12, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 13, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7623 Rev A 9-2008

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